BF240 transistor (npn) features power dissipation p cm: 0.3 w (tamb=25 ) collector current i cm: 0.025 a collector-base voltage v (br)cbo : 40 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 100 a , i e =0 40 v collector-emitter breakdown voltage v(br) ceo ic= 1 ma, i b =0 40 v emitter-base breakdown voltage v(br) ebo i e = 100 a, i c =0 4 v collector cut-off current i cbo v cb = 20v, i e =0 0.1 a emitter cut-off current i ebo v eb = 4v, i c =0 0.1 a dc current gain h fe v ce = 10v, i c = 1ma 67 220 collector-emitter saturation voltage v ce (sat) i c =10ma, i b =1ma 0.3 v collector-emitter voltage v be v ce =10v, i c =1ma 0.775 v transition frequency f t v ce = 10v, i c =1ma f =100mhz 150 mhz 1 2 3 to-92 1. collector 2. emitter 3. base b f240 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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